生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.16 | 最小漏源击穿电压: | 10 V |
最大漏极电流 (ID): | 0.7 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-F2 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SK2794CXUB | RENESAS | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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|
2SK2795 | HITACHI | Silicon N Channel MOS FET UHF Power Amplifier |
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2SK2795DX | HITACHI | 暂无描述 |
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2SK2795DXTL | HITACHI | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel |
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|
2SK2795DXTR | RENESAS | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel |
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2SK2795DXUL | HITACHI | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel |
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