2SK2795DXTL

更新时间： 2024-01-17 15:20:41

品牌	Logo	应用领域
日立 - HITACHI		放大器功率放大器
页数	文件大小	规格书
6页	43K
描述
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, UPAK-3

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

2SK2795DXTL 技术参数

2SK2795

Silicon N Channel MOS FET

UHF Power Amplifier

ADE-208-466 A (Z)

2nd. Edition

November. 1996

Features

•

High power output, High gain, High effeciency

PG = 11dB, Pout = 24dBm, ηD = 40 %min. (f = 836.5MHz)

Compact package capable of surface mounting

Outline

UPAK

1. Gate

2. Source

3. Drain

4. Source

This Device is sensitive to Electro Static Discharge.

An Adequate handling procedure is requested.

12 3 4 5 6

下载PDF

型号	品牌	描述	获取价格	数据表
2SK2795DXTR	RENESAS	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel	获取价格
2SK2795DXUL	HITACHI	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel	获取价格
2SK2796	RENESAS	Silicon N Channel MOS FET High Speed Power Switching	获取价格
2SK2796	HITACHI	Silicon N Channel MOS FET High Speed Power Switching	获取价格
2SK2796(L)	ETC	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 5A I(D) \| TO-251	获取价格
2SK2796(L)-(1)	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-251VAR	获取价格