Datasheet > 2SK2796(S)-(1)

2SK2796(S)-(1)

更新时间： 2024-02-25 09:32:35

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
12页	58K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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2SK2796(S)-(1) 数据手册

2SK2796(L), 2SK2796(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-534C (Z)

4th. Edition

Jul. 1998

Features

•

Low on-resistance

R_DS(on)= 0.12Ω typ.

4V gate drive devices.

High speed switching

•

Outline

DPAK |1

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...12

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型号	品牌	描述	获取价格	数据表
2SK2796(S)-(2)	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-252VAR	获取价格
2SK2796(S)-(3)	RENESAS	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格
2SK2796(S)TL	RENESAS	5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET	获取价格
2SK2796(S)TR	HITACHI	Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal	获取价格
2SK2796(S)TR	RENESAS	5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET	获取价格
2SK2796L	RENESAS	Silicon N Channel MOS FET High Speed Power Switching	获取价格