Datasheet > 2SK2796(S)-(1)

2SK2796(S)-(1)

更新时间： 2024-02-03 02:23:16

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
12页	58K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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数据手册

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2SK2796(S)-(1) 数据手册

2SK2796(L), 2SK2796(S)

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

100

DC Operation (Tc = 25°C)

Operation in

this area is

limited by R

DS(on)

0.3

0.1

Ta = 25°C

100

150

200

0.2 0.5

10 20

50 100

(V)

Drain to Source Voltage

Ambient Temperature Ta (°C)

Typical Output Characteristics

6 V

Typical Transfer Characteristics

10 V

5 V

4 V

3.5 V

25°C

–25°C

Pulse Test

3 V

Tc = 75°C

2.5 V

= 10 V

= 2 V

Pulse Test

(V)

Gate to Source Voltage

Drain to Source Voltage

(V)

1 2 345 6 7...12

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2SK2796(S)TR	RENESAS	5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET	获取价格
2SK2796L	RENESAS	Silicon N Channel MOS FET High Speed Power Switching	获取价格