Datasheet > 2SK2796(S)-(1)

2SK2796(S)-(1)

更新时间： 2024-02-02 10:02:57

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
12页	58K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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2SK2796(S)-(1) 数据手册

2SK2796(L), 2SK2796(S)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Drain Current

2.0

1.6

1.2

0.8

0.4

Pulse Test

0.5

= 5 A

= 4 V

10 V

0.2

0.1

2 A

1 A

0.05

0.1 0.3

(A)

100

Gate to Source Voltage

(V)

Drain Current

Forward Transfer Admittance vs.

Drain Current

Static Drain to Source on State Resistance

vs. Temperature

0.5

Pulse Test

Tc = –25 °C

0.4

0.3

0.2

0.1

1 A

25 °C

2 A

= 5 A

75 °C

= 4 V

0.5

5 A

1, 2 A

0.2

0.1

= 10 V

Pulse Test

10 V

–40

0.5

120

160

0.1 0.2

Case Temperature Tc (°C)

Drain Current

(A)

1 2 3 456 7 8...12

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与2SK2796(S)-(1)相关器件

型号	品牌	描述	获取价格	数据表
2SK2796(S)-(2)	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-252VAR	获取价格
2SK2796(S)-(3)	RENESAS	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格
2SK2796(S)TL	RENESAS	5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET	获取价格
2SK2796(S)TR	HITACHI	Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal	获取价格
2SK2796(S)TR	RENESAS	5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET	获取价格
2SK2796L	RENESAS	Silicon N Channel MOS FET High Speed Power Switching	获取价格