Datasheet > 2SK2796(S)-(1)

2SK2796(S)-(1)

更新时间： 2024-01-26 05:36:06

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
12页	58K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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2SK2796(S)-(1) 数据手册

2SK2796(L), 2SK2796(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_DSS

Ratings

Unit

Drain to source voltage

Gate to source voltage

Drain current

V_GSS

I_D

±20

Note1

Drain peak current

I_D(pulse)

Body-drain diode reverse drain current I_DR

Note3

Avalanche current

Avalanche energy

Channel dissipation

Channel temperature

Storage temperature

I_AP

E_AR

2.14

°C

Pch ^Note2

Tch

150

Tstg

–55 to +150

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

123 4 5 6 7...12

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型号	品牌	描述	获取价格	数据表
2SK2796(S)-(2)	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-252VAR	获取价格
2SK2796(S)-(3)	RENESAS	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格
2SK2796(S)TL	RENESAS	5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET	获取价格
2SK2796(S)TR	HITACHI	Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal	获取价格
2SK2796(S)TR	RENESAS	5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET	获取价格
2SK2796L	RENESAS	Silicon N Channel MOS FET High Speed Power Switching	获取价格