生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
Is Samacsys: | N | 配置: | Single |
最大漏极电流 (Abs) (ID): | 5 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 20 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2796(S)TL | RENESAS |
获取价格 |
5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET | |
2SK2796(S)TR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK2796(S)TR | RENESAS |
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5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET | |
2SK2796L | RENESAS |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK2796L | HITACHI |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK2796L-E | RENESAS |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK2796S | RENESAS |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK2796S | KEXIN |
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Silicon N-Channel MOSFET | |
2SK2796S | HITACHI |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK2796S | TYSEMI |
获取价格 |
Low on-resistance High speed switching Drain to source voltage VDSS 60 V |