Datasheet > 2SK2796S

2SK2796S

更新时间： 2024-11-19 06:23:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	45K
描述
Silicon N-Channel MOSFET

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中文翻译

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数据手册

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2SK2796S 数据手册

SMD Type

MOSFICET

Silicon N-Channel MOSFET

2SK2796S

Features

TO-252

Unit: mm

Low on-resistance

RDS = 0.12 typ.

High speed switching

+0.15

-0.15

+0.1

2.30

-0.1

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

0.127

max

+0.1

0.80

-0.1

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

P^D

Power dissipation

Channel temperature

Storage temperature

* PW 10 s,Duty Cycle 1%

T^ch

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

ID=10mA,VGS=0V

Min

Typ

Max

Unit

Drain source breakdown voltage

Drain cut-off current

V^DSS

I^DSS

I^GSS

VDS=60V,VGS=0

Gate leakage current

VGS= 16V,VDS=0

Gate to source cutoff voltage

Forward transfer admittance

VGS(off) VDS=10V,ID=1mA

1.0

2.5

2.0

VDS=10V,ID=3A

V^GS=10V,ID=3A

VGS=4V,ID=3A

4.0

Yfs

0.12 0.16

Drain to source on-state resistance

RDS(on)

0.16 0.25

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Ciss

C^oss

C^rss

t^on

t^r

180

V^DS=10V,VGS=0,f=1MHZ

I^D=3A,VGS(on)=10V,RL=10

Turn-off delay time

Fall time

t^off

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