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2SK2806 PDF预览

2SK2806

更新时间: 2024-11-18 22:32:39
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
3页 302K
描述
N-channel MOS-FET

2SK2806 数据手册

 浏览型号2SK2806的Datasheet PDF文件第2页浏览型号2SK2806的Datasheet PDF文件第3页 
N-channel MOS-FET  
2SK2806-01  
FAP-IIIB Series  
30V 0,02W 35A  
30W  
> Features  
> Outline Drawing  
- High Current  
- Low On-Resistance  
- No Secondary Breakdown  
- Low Driving Power  
- Avalanche Rated  
> Applications  
- Motor Control  
- General Purpose Power Amplifier  
DC-DC converters  
-
> Maximum Ratings and Characteristics  
> Equivalent Circuit  
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified  
Item  
Symbol  
Rating  
Unit  
V
Drain-Source-Voltage  
Continous Drain Current  
Pulsed Drain Current  
V
30  
35  
DS  
I
A
D
I
140  
A
D(puls)  
Gate-Source-Voltage  
V
±16  
129,3  
V
GS  
Maximum Avalanche Energy  
Max. Power Dissipation  
Operating and Storage Temperature Range  
E
mJ*  
W
AV  
P
30  
D
T
150  
°C  
°C  
ch  
T
-55 ~ +150  
* L=0,07mH, VCC=12V  
stg  
Electrical Characteristics (TC=25°C), unless otherwise specified  
-
Item  
Symbol  
Test conditions  
Min.  
30  
Typ.  
1,5  
Max.  
Unit  
V
ID=1mA  
ID=1mA  
VDS=30V  
VGS=0V  
Drain-Source Breakdown-Voltage  
Gate Threshhold Voltage  
Zero Gate Voltage Drain Current  
V
(BR)DSS  
VDS=VGS  
Tch=25°C  
Tch=125°C  
VDS=0V  
V
1,0  
2,0  
500  
1,0  
V
GS(th)  
I
10  
0,2  
µA  
mA  
nA  
W
DSS  
V
GS=0V  
VGS=±16V  
ID=17,5A  
Gate Source Leakage Current  
I
10  
100  
0,03  
0,02  
GSS  
VGS=4V  
Drain Source On-State Resistance  
R
0,022  
0,014  
33  
DS(on)  
VGS=10V  
VDS=25V  
W
S
ID=17,5A  
Forward Transconductance  
Input Capacitance  
g
16  
fs  
VDS=25V  
C
1100  
550  
240  
9
1650  
830  
360  
15  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
A
iss  
VGS=0V  
f=1MHz  
VCC=15V  
ID=35A  
Output Capacitance  
C
oss  
Reverse Transfer Capacitance  
Turn-On-Time ton (ton=td(on)+tr)  
C
rss  
t
d(on)  
t
15  
23  
r
Turn-Off-Time toff (ton=td(off)+tf)  
VGS=10V  
RGS=10 W  
t
75  
115  
75  
d(off)  
t
50  
f
Tch=25°C  
Avalanche Capability  
I
L = 100µH  
35  
AV  
IF=2xIDR VGS=0V Tch=25°C  
IF=2xIDR VGS=0V  
Diode Forward On-Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
V
0,98  
50  
1,71  
V
SD  
t
ns  
µC  
rr  
-dIF/dt=100A/µs Tch=25°C  
Q
0,08  
rr  
-
Thermal Characteristics  
Item  
Symbol  
Test conditions  
channel to air  
Min.  
Typ.  
Max.  
75  
Unit  
Thermal Resistance  
R
°C/W  
th(ch-a)  
R
channel to case  
4,16 °C/W  
th(ch-c)  
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98  

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