Datasheet > 2SK2806-01_05

2SK2806-01_05

更新时间： 2024-11-19 12:50:11

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	324K
描述
N-CHANNEL SILICON POWER MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK2806-01_05 数据手册

2SK2806-01

FUJI POWER MOSFET

200509

N-CHANNEL SILICON POWER MOSFET

FAP-IIIB SERIES

Features

Outline Drawings

TO-220AB

High speed switching

Low on-resistance

No secondary breakdown

Low driving power

High voltage

Avalanche-proof

Applications

Switching regulators

DC-DC converters

General purpose power amplifier

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

Equivalent circuit schematic

Item

Drain-source voltage

Symbol

VDS

Rating

Unit

Remarks

Drain(D)

Continuous drain current

Pulsed drain current

±35

±140

±16

ID[puls]

VGS

EAV

Gate(G)

Gate-source peak voltage

Maximum avalanche energy

Maximum power dissipation

Operating and storage

temperature range

129.3

°C

Tch

+150

-55 to +150

Source(S)

Tstg

*1 L=0.70mH, Vcc=12V

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Test Conditions

Item

Symbol

V(BR)DSS

VGS(th)

IDSS

ID=1mA

VDS=30V

VGS=0V

VDS=VGS

VGS=0V

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

1.0

1.5

0.2

2.0

500

1.0

100

Tch=25°C

µA

Tch=125°C

±16V

VGS=

VDS=0V

Gate-source leakage current

IGSS

ID=17.5A VGS=10V

VGS=4V

mΩ

Drain-source on-state resistance

RDS(on)

VGS=10V

ID=17.5A

VDS=25V

VGS=0V

f=1MHz

VDS=25V

Forward transconductance

Input capacitance

gfs

1100

550

240

1650

830

360

Ciss

Coss

Crss

td(on)

Output capacitance

Reverse transfer capacitance

Turn-on time

VCC=15V RG=10 Ω

ID=35A

VGS=10V

115

Turn-off time

td(off)

L=100µH

Tch=25°C

Avalanche capability

IAV

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

IF=2xIDR VGS=0V Tch=25°C

IF=2xIDR VGS=0V

0.98

0.08

1.71

VSD

trr

µC

-di/dt=100A/µs Tch=25°C

Qrr

Thermal characteristics

Item

Symbol

Rth(ch-c)

Rth(ch-a)

Min.

Typ.

Max. Units

4.16

°C/W

Thermal resistance

75.0

°C/W

www.fujielectric.co.jp/fdt/scd

12 3 4

中文翻译

下载PDF

与2SK2806-01_05相关器件

型号	品牌	获取价格	描述	数据表
2SK2807-01	ETC	获取价格
2SK2807-01L	FUJI	获取价格	N-channel MOS-FET
2SK2807-01L_05	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK2807-01S	FUJI	获取价格	N-channel MOS-FET
2SK2808	FUJI	获取价格	N-channel MOS-FET
2SK2808-01MR	FUJI	获取价格	N-channel MOS-FET
2SK2808-01MR_05	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK2809	FUJI	获取价格	N-channel MOS-FET
2SK2809-01MR	FUJI	获取价格	N-channel MOS-FET
2SK2809-01MR_05	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET