生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | SINGLE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 2 A | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 3.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 10 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2797LS | SANYO |
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DC/DC Converter Applications | |
2SK2798 | SHINDENGEN |
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VX-2 Series Power MOSFET(350V 6A) | |
2SK2799 | SHINDENGEN |
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VX-2 Series Power MOSFET(350V 10A) | |
2SK2800 | HITACHI |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK2800 | RENESAS |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK2800-E | RENESAS |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK2801 | RENESAS |
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50A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
2SK2802 | HITACHI |
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Silicon N Channel MOS FET Low Frequency Power Switching | |
2SK2802ZV | RENESAS |
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0.5A, 30V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET | |
2SK2802ZV-01 | RENESAS |
获取价格 |
0.5A, 30V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET |