Datasheet > 2SK2808

2SK2808

更新时间： 2024-11-18 22:32:39

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
3页	270K
描述
N-channel MOS-FET

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中文翻译

获取价格

数据手册

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2SK2808 数据手册

N-channel MOS-FET

2SK2808-01MR

20mW

±35A 20W

FAP-IIS Series

30V

> Features

> Outline Drawing

- High Speed Switching

- Low On-Resistance

- No Secondary Breakdown

- Low Driving Power

- High Voltage

- VGS = ± 30V Guarantee

- Repetitive Avalanche Rated

> Applications

- Switching Regulators

- UPS

- DC-DC converters

- General Purpose Power Amplifier

> Maximum Ratings and Characteristics

> Equivalent Circuit

- Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item

Symbol

Rating

Unit

Drain-Source-Voltage

Continous Drain Current

Pulsed Drain Current

Gate-Source-Voltage

Max. Avalanche Energy

Max. Power Dissipation

Operating and Storage Temperature Range

±35

±140

±16

D(puls)

129.3

°C

150

-55 ~ +150

L=0.70mH,Vcc=12V

stg

Electrical Characteristics (T_C=25°C), unless otherwise specified

Item

Symbol

Test conditions

Min.

Typ.

1,5

Max.

Unit

I_D=1mA

V_GS=0V

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

DSS

I_D=1mA

V_DS=V_GS

T_ch=25°C

T_ch=125°C

V_DS=0V

1,0

2,0

500

1,0

100

GS(th)

DSS

V_DS=30V

V_GS=0V

V_GS=±16V

I_D=17,5A

0,2

µA

Gate Source Leakage Current

GSS

V_GS=4V

Drain Source On-State Resistance

DS(on)

V_GS=10V

V_DS=25V

I_D=17,5A

Forward Transconductance

Input Capacitance

V_DS=25V

1100

550

240

1650

830

360

iss

oss

rss

d(on)

V_GS=0V

f=1MHz

V_CC=15V

I_D=35A

Output Capacitance

Reverse Transfer Capacitance

Turn-On-Time t_on(t_on=t_d(on)+t_r)

115

Turn-Off-Time t_off(t_on=t_d(off)+t_f)

V_GS=10V

R_GS=10 W

d(off)

T_ch=25°C

Avalanche Capability

L = 100µH

I_F=2xI_DRV_GS=0V T_ch=25°C

I_F=2xI_DRV_GS=0V

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

0,98

1,71

µC

-dI_F/dt=100A/µs T_ch=25°C

0,08

Thermal Characteristics

Item

Symbol

Test conditions

channel to case

channel to air

Min.

Typ.

Max.

6,25

Unit

Thermal Resistance

°C/W

th(ch-c)

th(ch-a)

62,5 °C/W

12 3

中文翻译

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