Datasheet > 2SK2796(S)-(1)

2SK2796(S)-(1)

更新时间： 2024-01-15 06:57:37

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
12页	58K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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2SK2796(S)-(1) 数据手册

2SK2796(L), 2SK2796(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

—

Max

—

Unit

Test Conditions

Drain to source breakdown voltage V_(BR)DSS60

I_D= 10mA, V_GS= 0

I_G= ±100µA, V_DS= 0

V_DS= 60 V, V_GS= 0

V_GS= ±16V, V_DS= 0

I_D= 1mA, V_DS= 10V

I_D= 3 A, V_GS= 10V^Note4

Gate to source breakdown voltage V_(BR)GSS±20

—

Zero gate voltege drain current

Gate to source leak current

Gate to source cutoff voltage

I_DSS

—

1.0

—

µA

I_GSS

—

±10

2.0

0.16

V_GS(off)

R_DS(on)

—

Static drain to source on state

resistance

0.12

Ω

Static drain to source on state

resistance

R_DS(on)

—

0.16

0.25

Ω

I_D= 3A, V_GS= 4V^Note4

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

|y_fs|

Ciss

Coss

Crss

t_d(on)

t_r

2.5

—

4.0

180

—

I_D= 3A, V_DS= 10V^Note4

V_DS= 10V

V_GS= 0

f = 1MHz

V_GS= 10V, I_D= 3A

R_L= 10Ω

1.0

Turn-off delay time

Fall time

t_d(off)

t_f

Body–drain diode forward voltage V_DF

I_F= 5A, V_GS= 0

Body–drain diode reverse

recovery time

t_rr

I_F= 5A, V_GS= 0

diF/ dt =50A/µs

Note: 4. Pulse test

1 234 5 6 7...12

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2SK2796(S)TL	RENESAS	5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET	获取价格
2SK2796(S)TR	HITACHI	Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal	获取价格
2SK2796(S)TR	RENESAS	5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET	获取价格
2SK2796L	RENESAS	Silicon N Channel MOS FET High Speed Power Switching	获取价格