5秒后页面跳转
2SK2796 PDF预览

2SK2796

更新时间: 2024-11-20 06:26:31
品牌 Logo 应用领域
瑞萨 - RENESAS 开关电源开关
页数 文件大小 规格书
9页 95K
描述
Silicon N Channel MOS FET High Speed Power Switching

2SK2796 数据手册

 浏览型号2SK2796的Datasheet PDF文件第2页浏览型号2SK2796的Datasheet PDF文件第3页浏览型号2SK2796的Datasheet PDF文件第4页浏览型号2SK2796的Datasheet PDF文件第5页浏览型号2SK2796的Datasheet PDF文件第6页浏览型号2SK2796的Datasheet PDF文件第7页 
2SK2796(L), 2SK2796(S)  
Silicon N Channel MOS FET  
High Speed Power Switching  
REJ03G1034-0500  
(Previous: ADE-208-534C)  
Rev.5.00  
Sep 07, 2005  
Features  
Low on-resistance  
RDS(on) = 0.12 typ.  
4 V gate drive devices.  
High speed switching  
Outline  
RENESAS Package code: PRSS0004ZD-A  
(Package name: DPAK(L)-(1))  
RENESAS Package code: PRSS0004ZD-C  
(Package name: DPAK(S))  
4
D
4
1. Gate  
G
2. Drain  
3. Source  
4. Drain  
1
2
3
1
2
3
S
Rev.5.00 Sep 07, 2005 page 1 of 8  

与2SK2796相关器件

型号 品牌 获取价格 描述 数据表
2SK2796(L) ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251
2SK2796(L)-(1) RENESAS

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-251VAR
2SK2796(L)|2SK2796(S) ETC

获取价格

2SK2796(S) ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252AA
2SK2796(S)-(1) RENESAS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2796(S)-(2) RENESAS

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-252VAR
2SK2796(S)-(3) RENESAS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2796(S)TL RENESAS

获取价格

5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2796(S)TR HITACHI

获取价格

Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal
2SK2796(S)TR RENESAS

获取价格

5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET