Datasheet > 2SK2788_11

2SK2788_11

更新时间： 2024-11-24 12:53:03

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	90K
描述
Silicon N Channel MOS FET High Speed Power Switching

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中文翻译

获取价格

数据手册

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2SK2788_11 数据手册

Preliminary Datasheet

HAT2203C

Silicon N Channel MOS FET

Power Switching

R07DS0323EJ0500

(Previous: REJ03G0447-0400)

Rev.5.00

Mar 28, 2011

Features



Low on-resistance

_DS(on)= 69 m typ.(at V_GS= 4.5 V)



Low drive current

High density mounting

2.5 V gate drive device

Outline

RENESAS Package code: PWSF0006JA-A

(Package name: CMFPAK - 6)

2 3 4 5

D D D D

Index band

1. Source

2. Drain

3. Drain

4. Drain

5. Drain

6. Gate

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to Source voltage

Gate to Source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

±12

Note1

Drain peak current

I_{D (pulse)}

Body - Drain diode reverse Drain current

Channel dissipation

I_DR

Pch ^Note2

Tch

830

150

C

Channel temperature

Storage temperature

Tstg

–55 to +150

Notes: 1. PW  10 s, duty cycle  1%

2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)

R07DS0323EJ0500 Rev.5.00

Mar 28, 2011

Page 1 of 6

12 3 4 5 6 7

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2SK2788VY	RENESAS	获取价格	2A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2788VYTL	HITACHI	获取价格	2A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2788VYTL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2788VYTR	RENESAS	获取价格	2A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET
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