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2SK2794

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2SK2794 数据手册

2SK2795

Silicon N Channel MOS FET

UHF Power Amplifier

ADE-208-466 A (Z)

2nd. Edition

November. 1996

Features

•

High power output, High gain, High effeciency

PG = 11dB, Pout = 24dBm, ηD = 40 %min. (f = 836.5MHz)

Compact package capable of surface mounting

Outline

UPAK

1. Gate

2. Source

3. Drain

4. Source

This Device is sensitive to Electro Static Discharge.

An Adequate handling procedure is requested.

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
2SK2794CX	RENESAS	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
2SK2794CXTB	RENESAS	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
2SK2794CXUB	RENESAS	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
2SK2795	HITACHI	获取价格	Silicon N Channel MOS FET UHF Power Amplifier
2SK2795DX	HITACHI	获取价格	暂无描述
2SK2795DXTL	HITACHI	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
2SK2795DXTR	RENESAS	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
2SK2795DXUL	HITACHI	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
2SK2796	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2796	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching