是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | TO-220FN, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.83 |
外壳连接: | ISOLATED | 配置: | SINGLE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (Abs) (ID): | 5 A |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 1.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 30 W |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | TIN SILVER COPPER | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2794 | ETC |
获取价格 |
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2SK2794CX | RENESAS |
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UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | |
2SK2794CXTB | RENESAS |
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UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | |
2SK2794CXUB | RENESAS |
获取价格 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | |
2SK2795 | HITACHI |
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Silicon N Channel MOS FET UHF Power Amplifier | |
2SK2795DX | HITACHI |
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暂无描述 | |
2SK2795DXTL | HITACHI |
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
2SK2795DXTR | RENESAS |
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
2SK2795DXUL | HITACHI |
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
2SK2796 | RENESAS |
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Silicon N Channel MOS FET High Speed Power Switching |