Datasheet > 2SK2776_06

2SK2776_06

更新时间： 2024-11-24 04:26:27

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	761K
描述
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

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中文翻译

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数据手册

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2SK2776_06 数据手册

2SK2776

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2776

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.75 Ω (typ.)

DS (ON)

: |Y | = 7.0 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 500 V)

DSS

z Enhancement mode : V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

312

(Note 2)

JEDEC

JEITA

―

Avalanche current

6.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

TOSHIBA

2-10S1B

Storage temperature range

−55~150

stg

Weight: 1.5 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

1.92

83.3

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 8.3 mH, R = 25 Ω,

JEDEC

JEITA

―

= 8 A

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-02

12 3 4 5 6

中文翻译

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与2SK2776_06相关器件

型号	品牌	获取价格	描述	数据表
2SK2776_10	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2777	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-
2SK2777(2-10S2B)	TOSHIBA	获取价格	TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, 3 PIN,
2SK2777(TE24L)	TOSHIBA	获取价格	MOSFET N-CH 600V 6A TO-220FL
2SK2777(TE24L,Q)	TOSHIBA	获取价格	MOSFET N-CH 600V 6A TO-220SM
2SK2777(TO-220FL)	TOSHIBA	获取价格	TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, F
2SK2777_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK2777_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2778	SANKEN	获取价格	MOSFET
2SK2779	SANKEN	获取价格	MOSFET

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