5秒后页面跳转
捷配首页

Datasheet > 2SK2782(T6L1CK,Q)
2SK2782(T6L1CK,Q) PDF预览

2SK2782(T6L1CK,Q)

更新时间： 2024-11-20 14:39:27
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 445K
描述
Power Field-Effect Transistor

阅读下载

中文翻译

获取价格

2SK2782(T6L1CK,Q) 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.66
Base Number Matches：1

2SK2782(T6L1CK,Q) 数据手册

 浏览型号2SK2782(T6L1CK,Q)的Datasheet PDF文件第2页浏览型号2SK2782(T6L1CK,Q)的Datasheet PDF文件第3页浏览型号2SK2782(T6L1CK,Q)的Datasheet PDF文件第4页浏览型号2SK2782(T6L1CK,Q)的Datasheet PDF文件第5页浏览型号2SK2782(T6L1CK,Q)的Datasheet PDF文件第6页 
2SK2782  
2
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV)  
2SK2782  
Unit: mm  
Chopper Regulator, DC-DC Converter and Motor Drive  
6.8 MAX.  
Applications  
5.2 ± 0.2  
0.6 MAX  
z 4-V gate drive  
z Low drain−source ON-resistance  
z High forward transfer admittance  
: R  
= 0.039 Ω (typ.)  
DS (ON)  
: |Y | = 11 S (typ.)  
fs  
z Low leakage current : I  
= 100 μA (max) (V  
= 60 V)  
DSS  
DS  
0.95 MAX.  
z Enhancement mode : V = 0.8 to 2.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
0.6 ± 0.15  
Absolute Maximum Ratings (Ta = 25°C)  
0.6 MAX.  
2.3 2.3  
Characteristic  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
60  
60  
V
V
DSS  
1
2
3
2
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
1. GATE  
1
V
±20  
20  
V
2. DRAIN  
GSS  
（HEAT SINK）  
3. SOURSE  
DC (Note 1)  
I
D
A
3
Drain current  
Pulse (Note 1)  
I
50  
A
DP  
JEDEC  
―
Drain power dissipation (Tc = 25°C)  
Single-pulse avalanche energy  
P
40  
W
D
AS  
AR  
JEITA  
SC-64  
2-7B5B  
E
156  
mJ  
(Note 2)  
TOSHIBA  
Avalanche current  
I
20  
4
A
Weight: 0.36 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
6.8 MAX.  
T
150  
ch  
5.2 ± 0.2  
0.6 MAX.  
Storage temperature range  
T
stg  
−55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate reliability  
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data  
(i.e. reliability test report and estimated failure rate, etc).  
0.6 ± 0.15  
0.95 MAX.  
0.6 ± 0.15  
0.6 MAX.  
2.3  
2.3  
1
2
3
2.3 2.3  
Thermal Characteristics  
2
Characteristic  
Symbol  
Max  
Unit  
1. GATE  
2. DRAIN  
1
（HEAT SINK）  
3. SOURSE  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
3.125  
125  
°C / W  
°C / W  
th (ch−c)  
3
R
th (ch−a)  
JEDEC  
―
―
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 25 V, T = 25°C (initial), L = 530 μH, R = 25 Ω, I = 20 A  
JEITA  
V
DD  
ch  
G
D
TOSHIBA  
2-7B7B  
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature  
Weight: 0.36 g (typ.)  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-12-21  
123456

中文翻译

下载PDF

与2SK2782(T6L1CK,Q)相关器件

型号 品牌 获取价格 描述 数据表
2SK2782_06 TOSHIBA

获取价格

 		Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications
2SK2782_09 TOSHIBA

获取价格

 		Chopper Regulator, DC-DC Converter and Motor Drive Applications
2SK2786-11-C MITSUBISHI

获取价格

 		Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction
2SK2786-11-D MITSUBISHI

获取价格

 		Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction
2SK2786-T11-E MITSUBISHI

获取价格

 		Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction
2SK2787LS ETC

获取价格

 		TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-220F
2SK2788 HITACHI

获取价格

 		Silicon N Channel MOS FET High Speed Power Switching
2SK2788 RENESAS

获取价格

 		Silicon N Channel MOS FET High Speed Power Switching
2SK2788_11 RENESAS

获取价格

 		Silicon N Channel MOS FET High Speed Power Switching
2SK2788VY RENESAS

获取价格

 		2A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET

与2SK2782(T6L1CK,Q)相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证