Datasheet > 2SK2782_09

2SK2782_09

更新时间： 2024-11-20 06:23:19

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	426K
描述
Chopper Regulator, DC-DC Converter and Motor Drive Applications

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中文翻译

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数据手册

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2SK2782_09 数据手册

2SK2782

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV)

2SK2782

Unit: mm

Chopper Regulator, DC-DC Converter and Motor Drive

6.8 MAX.

Applications

5.2 ± 0.2

0.6 MAX

z 4-V gate drive

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 0.039 Ω (typ.)

DS (ON)

: |Y | = 11 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 60 V)

DSS

0.95 MAX.

z Enhancement mode : V = 0.8 to 2.0 V (V

= 10 V, I = 1 mA)

0.6 ± 0.15

Absolute Maximum Ratings (Ta = 25°C)

0.6 MAX.

2.3 2.3

Characteristic

Drain−source voltage

Symbol

Rating

Unit

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

1. GATE

±20

2. DRAIN

GSS

（HEAT SINK）

3. SOURSE

DC (Note 1)

Drain current

Pulse (Note 1)

JEDEC

―

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

JEITA

SC-64

2-7B5B

156

(Note 2)

TOSHIBA

Avalanche current

Weight: 0.36 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

6.8 MAX.

150

5.2 ± 0.2

0.6 MAX.

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

0.6 ± 0.15

0.95 MAX.

0.6 ± 0.15

0.6 MAX.

2.3

2.3 2.3

Thermal Characteristics

Characteristic

Symbol

Max

Unit

1. GATE

2. DRAIN

（HEAT SINK）

3. SOURSE

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.125

125

°C / W

th (ch−c)

th (ch−a)

JEDEC

―

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 530 μH, R = 25 Ω, I = 20 A

JEITA

TOSHIBA

2-7B7B

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

Weight: 0.36 g (typ.)

This transistor is an electrostatic-sensitive device. Handle with care.

2009-12-21

12 3 4 5 6

中文翻译

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与2SK2782_09相关器件

型号	品牌	获取价格	描述	数据表
2SK2786-11-C	MITSUBISHI	获取价格	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction
2SK2786-11-D	MITSUBISHI	获取价格	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction
2SK2786-T11-E	MITSUBISHI	获取价格	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction
2SK2787LS	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 8A I(D) \| TO-220F
2SK2788	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2788	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2788_11	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2788VY	RENESAS	获取价格	2A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2788VYTL	HITACHI	获取价格	2A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2788VYTL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching

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