Datasheet > 2SK2782_06

2SK2782_06

更新时间： 2024-11-24 04:26:27

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动
页数	文件大小	规格书
6页	723K
描述
Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications

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2SK2782_06 数据手册

2SK2782

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV)

2SK2782

Unit: mm

Chopper Regulator, DC/DC Converter and Motor Drive

Applications

z 4 V gate drive

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 0.039 Ω (typ.)

DS (ON)

: |Y | = 11 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 60 V)

DSS

z Enhancement mode : V = 0.8~2.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain−source voltage

Symbol

Rating

Unit

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±20

GSS

DC (Note 1)

Drain current

Pulse (Note 1)

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

SC-64

2-7B5B

156

(Note 2)

TOSHIBA

Avalanche current

Weight: 0.36 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

3.125

125

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

JEDEC

―

JEITA

SC-64

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 530 μH, R = 25 Ω, I = 20 A

TOSHIBA

2-7B7B

Weight: 0.36 g (typ.)

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2006-11-17

12 3 4 5 6

中文翻译

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与2SK2782_06相关器件

型号	品牌	获取价格	描述	数据表
2SK2782_09	TOSHIBA	获取价格	Chopper Regulator, DC-DC Converter and Motor Drive Applications
2SK2786-11-C	MITSUBISHI	获取价格	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction
2SK2786-11-D	MITSUBISHI	获取价格	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction
2SK2786-T11-E	MITSUBISHI	获取价格	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction
2SK2787LS	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 8A I(D) \| TO-220F
2SK2788	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2788	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2788_11	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2788VY	RENESAS	获取价格	2A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2788VYTL	HITACHI	获取价格	2A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET

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