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2SK2777(2-10S2B) PDF预览

2SK2777(2-10S2B)

更新时间： 2024-11-20 14:46:23
品牌 Logo 应用领域
东芝 - TOSHIBA 开关脉冲晶体管
页数 文件大小 规格书
6页 462K
描述
TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, 3 PIN, FET General Purpose Power

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中文翻译

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2SK2777(2-10S2B) 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220SM包装说明：SMALL OUTLINE, R-PSSO-G2
针数：3Reach Compliance Code：unknown
风险等级：5.92雪崩能效等级（Eas）：345 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：600 V最大漏极电流 (ID)：6 A
最大漏源导通电阻：1.25 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：24 A
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SK2777(2-10S2B) 数据手册

 浏览型号2SK2777(2-10S2B)的Datasheet PDF文件第2页浏览型号2SK2777(2-10S2B)的Datasheet PDF文件第3页浏览型号2SK2777(2-10S2B)的Datasheet PDF文件第4页浏览型号2SK2777(2-10S2B)的Datasheet PDF文件第5页浏览型号2SK2777(2-10S2B)的Datasheet PDF文件第6页 
2SK2777  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-−MOSV)  
2SK2777  
Chopper Regulator, DC−DC Converter and Motor Drive  
Unit: mm  
Applications  
z Low drain−source ON resistance  
z High forward transfer admittance  
: R  
= 0.9 Ω (typ.)  
DS (ON)  
: |Y | = 5.5 S (typ.)  
fs  
z Low leakage current : I  
= 100 μA (max) (V  
= 600 V)  
DSS  
DS  
z Enhancement mode : V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
V
V
600  
600  
±30  
6
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
I
A
D
Drain current  
Pulse (Note 1)  
I
24  
A
DP  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
65  
W
D
AS  
AR  
JEDEC  
JEITA  
―
―
E
345  
mJ  
(Note 2)  
Avalanche current  
I
6
6.5  
A
TOSHIBA  
2-10S1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 1.5 g (typ.)  
T
ch  
150  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage,  
etc.) are within the absolute maximum ratings. Please design the  
appropriate reliability upon reviewing the Toshiba Semiconductor  
Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
1.92  
83.3  
°C / W  
°C / W  
th (ch−c)  
R
th (ch−a)  
JEDEC  
JEITA  
―
―
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 16.8 mH, R = 25 Ω,  
V
DD  
ch  
G
I
= 6 A  
AR  
TOSHIBA  
2-10S2B  
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature  
Weight: 1.5 g (typ.)  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2009-09-29  
123456

中文翻译

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