Datasheet > 2SK2777(TE24L,Q)

2SK2777(TE24L,Q)

更新时间： 2024-01-28 10:13:10

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	462K
描述
MOSFET N-CH 600V 6A TO-220SM

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技术参数
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2SK2777(TE24L,Q) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.59	Is Samacsys：	N
Base Number Matches：	1

2SK2777(TE24L,Q) 数据手册

2SK2777

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-−MOSV)

2SK2777

Chopper Regulator, DC−DC Converter and Motor Drive

Unit: mm

Applications

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.9 Ω (typ.)

DS (ON)

: |Y | = 5.5 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 600 V)

DSS

z Enhancement mode : V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

JEITA

―

345

(Note 2)

Avalanche current

6.5

TOSHIBA

2-10S1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.5 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.92

83.3

°C / W

th (ch−c)

th (ch−a)

JEDEC

JEITA

―

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 16.8 mH, R = 25 Ω,

= 6 A

TOSHIBA

2-10S2B

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

Weight: 1.5 g (typ.)

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

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