Datasheet > 2SK2777(TE24L,Q)

2SK2777(TE24L,Q)

更新时间： 2024-11-20 14:46:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	462K
描述
MOSFET N-CH 600V 6A TO-220SM

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SK2777(TE24L,Q) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.59	Is Samacsys：	N
Base Number Matches：	1

2SK2777(TE24L,Q) 数据手册

2SK2777

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-−MOSV)

2SK2777

Chopper Regulator, DC−DC Converter and Motor Drive

Unit: mm

Applications

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.9 Ω (typ.)

DS (ON)

: |Y | = 5.5 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 600 V)

DSS

z Enhancement mode : V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

JEITA

―

345

(Note 2)

Avalanche current

6.5

TOSHIBA

2-10S1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.5 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.92

83.3

°C / W

th (ch−c)

th (ch−a)

JEDEC

JEITA

―

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 16.8 mH, R = 25 Ω,

= 6 A

TOSHIBA

2-10S2B

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

Weight: 1.5 g (typ.)

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

下载PDF

与2SK2777(TE24L,Q)相关器件

型号	品牌	获取价格	描述	数据表
2SK2777(TO-220FL)	TOSHIBA	获取价格	TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, F
2SK2777_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK2777_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2778	SANKEN	获取价格	MOSFET
2SK2779	SANKEN	获取价格	MOSFET
2SK278	NEC	获取价格	Power Field-Effect Transistor, 7A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal
2SK278	RENESAS	获取价格	7A, 400V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3, 2 PIN
2SK2782	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-
2SK2782(2-7B7B)	TOSHIBA	获取价格	TRANSISTOR 20 A, 60 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-7B7B, 3
2SK2782(SM)	TOSHIBA	获取价格	暂无描述

与2SK2777(TE24L,Q)相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2777(TE24L,Q)

2SK2777(TE24L,Q) 技术参数

2SK2777(TE24L,Q) 数据手册

与2SK2777(TE24L,Q)相关器件

与2SK2777(TE24L,Q)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2777(TE24L,Q)

2SK2777(TE24L,Q) 技术参数

2SK2777(TE24L,Q) 数据手册

与2SK2777(TE24L,Q)相关器件

与2SK2777(TE24L,Q)相关文章

您还可以找

您在本页遇到什么问题？