2SK2604(T)

更新时间： 2024-10-01 13:04:27

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	411K
描述
MOSFET N-CH 800V 5A 2-16C1B

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中文翻译

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技术参数
数据手册

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2SK2604(T) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.72	Base Number Matches：	1

2SK2604(T) 数据手册

2SK2604

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2604

Switching Regulator Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 1.9 Ω (typ.)

DS (ON)

: |Y | = 3.8 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 640 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

800

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20k Ω)

DGR

GSS

1. GATE

DC (Note 1)

Pulse (Note 1)

2. DRAIN (HEAT SINK)

3. SOURCE

Drain current

Drain power dissipation (Tc = 25°C)

125

JEDEC

JEITA

―

Single pulse avalanche energy

370

(Note 2)

Avalanche current

12.5

TOSHIBA

2-16C1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 4.6 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.0

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 27 mH, R = 25 Ω, I = 5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

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与2SK2604(T)相关器件

型号	品牌	获取价格	描述	数据表
2SK2604_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications
2SK2604_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK2605	TOSHIBA	获取价格	N CHANNEL MOS TYPE HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR APPLICATIONS)
2SK2605_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications
2SK2605_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK2606	TOSHIBA	获取价格	N CHANNEL MOS TYPE (DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
2SK2606_06	TOSHIBA	获取价格	Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2606_09	TOSHIBA	获取价格	DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2607	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2607(F)	TOSHIBA	获取价格	TRANSISTOR 9 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-16C1B, SC-65, 3 PIN, FET G

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