2SK2611T

更新时间： 2024-11-15 12:54:27

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器继电器电机
页数	文件大小	规格书
6页	414K
描述
DCâDC Converter, Relay Drive and Motor Drive

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中文翻译

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数据手册

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2SK2611T 数据手册

2SK2611

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2611

DC−DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 1.2 Ω (typ.)

DS (ON)

: |Y | 7.0 S (typ.)

z Low leakage current

z Enhancement−mode

: I

= 100 μA (max) (V

= 720 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

900

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

1. GATE

DC (Note 1)

Pulse (Note 1)

2. DRAIN (HEAT SINK)

3. SOURCE

Drain current

Drain power dissipation (Tc = 25°C)

150

JEDEC

―

Single pulse avalanche energy

663

(Note 2)

JEITA

SC-65

2-16C1B

Avalanche current

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 4.6 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833

°C / W

th (ch−c)

th (ch−a)

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 15 mH, R = 25 Ω, I = 9 A

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device.

Please handle with caution.

2010-01-29

12 3 4 5 6

中文翻译

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与2SK2611T相关器件

型号	品牌	获取价格	描述	数据表
2SK2613	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)
2SK2613(F)	TOSHIBA	获取价格	MOSFET N-CH 1KV 8A 2-16C1B
2SK2613(Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,8A I(D),TO-247VAR
2SK2613_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications, DC-DC Converter and Motor Dri
2SK2613_10	TOSHIBA	获取价格	Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
2SK2614	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2614(SM)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,20A I(D),TO-252AA
2SK2614_06	TOSHIBA	获取价格	Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications
2SK2614_09	TOSHIBA	获取价格	Chopper Regulator, DC-DC Converter and Motor Drive Applications
2SK2615	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER

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