Datasheet > 2SK2613_06

2SK2613_06

更新时间： 2024-11-15 04:26:27

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器开关电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	211K
描述
Silicon N Channel MOS Type Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

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2SK2613_06 数据手册

2SK2613

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)

2SK2613

Switching Regulator Applications, DC-DC Converter and

Motor Drive Applications

Unit: mm

•

Low drain-source ON resistance: R

= 1.4 Ω (typ.)

DS (ON)

High forward transfer admittance: ⎪Y ⎪ = 6.0 S (typ.)

Low leakage current: I

= 100 μA (max) (V

= 800 V)

DSS

Enhancement-model: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

1000

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

1. GATE

2. DRAIN (HEAT SINK)

3. SOURSE

(Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

150

JEDEC

JEITA

―

Single pulse avalanche energy

910

(Note 2)

TOSHIBA

2−16C1B

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 4.6 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: = 90 V, T = 25°C, L = 26.3 mH, R = 25 Ω, I = 8 A

Note 3: Repetitive rating: Pulse width limited by max junction temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2006-11-09

12 3 4 5 6

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与2SK2613_06相关器件

型号	品牌	获取价格	描述	数据表
2SK2613_10	TOSHIBA	获取价格	Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
2SK2614	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2614(SM)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,20A I(D),TO-252AA
2SK2614_06	TOSHIBA	获取价格	Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications
2SK2614_09	TOSHIBA	获取价格	Chopper Regulator, DC-DC Converter and Motor Drive Applications
2SK2615	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2615(TE12L)	TOSHIBA	获取价格	TRANSISTOR 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-5K1B, 3 PIN, FET General
2SK2615(TE12L,F)	TOSHIBA	获取价格	TRANSISTOR 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-5K1B, 3 PIN, FET General
2SK2615(TE12L,Q)	TOSHIBA	获取价格	Small Signal Field-Effect Transistor
2SK2615_06	TOSHIBA	获取价格	Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications

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