Datasheet > 2SK2627

2SK2627

更新时间： 2024-11-14 22:52:55

品牌	Logo	应用领域
三洋 - SANYO		开关
页数	文件大小	规格书
4页	114K
描述
Ultrahigh-Speed Switching Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK2627 数据手册

Ordering number:ENN6228A

N-Channel Silicon MOSFET

2SK2627

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

unit:mm

· Low ON-resistance.

· Low Qg.

2128

[2SK2627]

8.2

7.8

6.2

0.6

0.3

0.6

1.0

2.54

1.0

2.54

5.08

7.8

10.0

6.0

1 : Gate

2 : Source

3 : Drain

SANYO : ZP

(Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

600

DSS

Gate-to-Source Voltage

Drain Current (DC)

±30

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

Tc=25°C

Tch

˚C

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

600

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0

(BR)DSS

=600V, V =0

=±30V, V =0

=10V, I =1mA

=10V, I =2.5A

1.0

DSS

±100

5.5

GSS

3.5

1.5

GS(off)

| yfs |

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

3.0

Ω

=2.5A, V =15V

1.5

700

220

110

2.0

DS(on)

Ciss

=20V, f=1MHz

Output Capacitance

Coss

Crss

=20V, f=1MHz

Reverse Transfer Capacitance

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N2000TS (KOTO) TA-2882 No.6228–1/4

12 3 4

中文翻译

下载PDF

与2SK2627相关器件

型号	品牌	获取价格	描述	数据表
2SK2628	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 6A I(D) \| TO-220VAR
2SK2628ALS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK2628FG	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK2628FS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK2628LS	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SK2629	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 10A I(D) \| TO-247VAR
2SK2630	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 12A I(D) \| TO-247VAR
2SK2631	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SK2632LS	SANYO	获取价格	醣驮彳槟
2SK2633LS	SANYO	获取价格	2SK2633LS

与2SK2627相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

7
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

4
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

30
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

13

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2627

2SK2627 数据手册

与2SK2627相关器件

与2SK2627相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2627

2SK2627 数据手册

与2SK2627相关器件

与2SK2627相关文章

您还可以找

您在本页遇到什么问题？