2SK2644-01

更新时间： 2024-11-15 03:05:19

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	222K
描述
N-CHANNEL SILICON POWER MOSFET

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数据手册

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2SK2644-01 数据手册

2SK2644-01

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

FAP-IIS SERIES

Features

Outline Drawings

High speed switching

Low on-resistance

No secondary breakdown

Low driving power

High voltage

TO-3P

VGS= 35V Guarantee

Avalanche-proof

Applications

Switching regulators

UPS

DC-DC converters

General purpose power amplifier

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

Equivalent circuit schematic

Item

Symbol

VDS

Rating

500

±18

±72

±35

Unit

Remarks

Drain-source voltage

Continuous drain current

Pulsed drain current

Gate-source peak voltage

Repetitive or non-repetitive

Maximum avalanche energy

Maximum power dissipation

Operating and storage

temperature range

Drain(D)

ID[puls]

VGS

IAV

Gate(G)

°C

Rch 150

°C

EAV

518.5

125

Source(S)

Tch

+150

-55 to +150

Tstg

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Item

Symbol

V(BR)DSS

VGS(th)

IDSS

Test Conditions

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

ID=1mA

VGS=0V

500

VDS=VGS

3.5

4.0

0.2

0.38

4.5

µA

VDS=500V VGS=0V

Tch=25°C

Tch=125°C

500

1.0

100

0.45

±35V

Gate-source leakage current

Drain-source on-state resistance

Forward transconductance

Input capacitance

IGSS

RDS(on)

gfs

VGS=

VDS=0V

VGS=10V

VDS=25V

Ω

ID=9A

5.5

1700

280

120

ID=9A

Ciss

Coss

Crss

td(on)

2600

420

180

VDS=25V

VGS=0V

f=1MHz

VCC=300V RG=10 Ω

ID=18A

Output capacitance

Reverse transfer capacitance

Turn-on time

100

110

150

165

100

VGS=10V

Turn-off time

td(off)

L=2.93mH

Tch=25°C

Avalanche capability

IAV

IF=2xIDR VGS=0V Tch=25°C

IF=IDR VGS=0V

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

VSD

trr

1.1

620

9.0

1.65

µC

-di/dt=100A/µs Tch=25°C

Qrr

Thermal characteristics

Item

Symbol

Rth(ch-c)

Rth(ch-a)

Min.

Typ.

Max. Units

1.0

°C/W

Thermal resistance

35.0

°C/W

www.fujielectric.co.jp/fdt/scd

12 3 4

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