Datasheet > 2SK2613

2SK2613

更新时间： 2024-09-30 22:32:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	226K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)

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数据手册

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2SK2613 数据手册

2SK2613

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII)

2SK2613

Switching Regulator Applications, DC-DC Converter and

Unit: mm

Motor Drive Applications

Low drain-source ON resistance: R

= 1.4 Ω (typ.)

DS (ON)

High forward transfer admittance: ïY ï = 6.0 S (typ.)

= 100 µA (max) (V

Low leakage current: I

= 800 V)

= 10 V, I = 1 mA)

DSS

Enhancement-model: V = 2.0~4.0 V (V

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

1000

±30

DSS

DGR

GSS

Drain-gate voltage (R

= 20 kW)

Gate-source voltage

(Note 1)

1. GATE

Drain current

2. DRAIN (HEAT SINK)

3. SOURSE

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

150

Single pulse avalanche energy

JEDEC

JEITA

―

910

(Note 2)

Avalanche current

TOSHIBA

2−16C1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Weight: 4.6 g (typ.)

Storage temperature range

-55~150

stg

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: V = 90 V, T = 25°C, L = 26.3 mH, R = 25 W, I = 8 A

DD ch AR

Note 3: Repetitive rating: Pulse width limited by max junction temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2002-08-09

12 3 4 5 6

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