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2SK2606_06

更新时间： 2024-11-15 04:26:27
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器转换器继电器电机DC-DC转换器
页数 文件大小 规格书
3页 151K
描述
Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications

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2SK2606_06 数据手册

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2SK2606  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)  
2SK2606  
DC−DC Converter, Relay Drive and Motor Drive  
Applications  
Unit: mm  
z
z
z
z
Low drain−source ON resistance  
: R  
= 1.0 Ω (typ.)  
DS (ON)  
High forward transfer admittance : |Y | 7.0 S (typ.)  
fs =  
Low leakage current  
Enhancement mode  
: I  
= 100 μA (max) (V  
= 640 V)  
DSS  
DS  
: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
800  
800  
±30  
8
V
V
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
Drain current  
I
24  
A
DP  
Drain power dissipation (Tc = 25°C)  
P
85  
W
D
AS  
AR  
JEDEC  
JEITA  
―
―
Single pulse avalanche energy  
E
883  
mJ  
(Note 2)  
Avalanche current  
I
8
8.5  
A
TOSHIBA  
2-16F1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 5.8 g (typ.)  
T
ch  
150  
Storage temperature range  
T
−55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
1.47  
41.6  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (ch−c)  
th (ch−a)  
Thermal resistance, channel to  
ambient  
R
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 25.0 mH, I = 8 A, R = 25 Ω  
V
DD  
ch  
AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2006-11-10  
123

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