Datasheet > 2SK2606_06

2SK2606_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器继电器电机 DC-DC转换器
页数	文件大小	规格书
3页	151K
描述
Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications

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2SK2606_06 数据手册

2SK2606

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2606

DC−DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

Low drain−source ON resistance

: R

= 1.0 Ω (typ.)

DS (ON)

High forward transfer admittance : |Y | 7.0 S (typ.)

fs =

Low leakage current

Enhancement mode

: I

= 100 μA (max) (V

= 640 V)

DSS

: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

800

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

883

(Note 2)

Avalanche current

8.5

TOSHIBA

2-16F1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 5.8 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

1.47

41.6

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 25.0 mH, I = 8 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-10

12 3

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