Datasheet > 2SK2610_09

2SK2610_09

更新时间： 2024-11-15 12:49:59

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	429K
描述
Chopper Regulator, DC−DC Converter and Motor Drive Applications

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中文翻译

获取价格

数据手册

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2SK2610_09 数据手册

2SK2610

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2610

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 2.3 Ω (typ.)

DS (ON)

: |Y | 4.4 S (typ.)

fs =

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 720 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

900

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

1. GATE

DC (Note 1)

Pulse (Note 1)

2. DRAIN (HEAT SINK)

3. SOURCE

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

150

JEDEC

―

595

(Note 2)

JEITA

SC-65

2-16C1B

Avalanche current

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 4.6 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

0.833

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 43.6 mH, I = 5 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

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与2SK2610_09相关器件

型号	品牌	获取价格	描述	数据表
2SK2611	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND M
2SK2611(T)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,9A I(D),TO-247VAR
2SK2611_06	TOSHIBA	获取价格	Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2611_10	TOSHIBA	获取价格	DC−DC Converter, Relay Drive and Motor Drive
2SK2611T	TOSHIBA	获取价格	DCâDC Converter, Relay Drive and Motor Driv
2SK2613	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)
2SK2613(F)	TOSHIBA	获取价格	MOSFET N-CH 1KV 8A 2-16C1B
2SK2613(Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,8A I(D),TO-247VAR
2SK2613_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications, DC-DC Converter and Motor Dri
2SK2613_10	TOSHIBA	获取价格	Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

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