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2SK2606_09

更新时间： 2024-11-15 07:32:23
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器转换器继电器电机DC-DC转换器
页数 文件大小 规格书
3页 148K
描述
DC−DC Converter, Relay Drive and Motor Drive Applications

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中文翻译

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2SK2606_09 数据手册

 浏览型号2SK2606_09的Datasheet PDF文件第2页浏览型号2SK2606_09的Datasheet PDF文件第3页 
2SK2606  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)  
2SK2606  
DC−DC Converter, Relay Drive and Motor Drive  
Applications  
Unit: mm  
z
z
z
z
Low drain−source ON resistance  
: R  
= 1.0 Ω (typ.)  
DS (ON)  
High forward transfer admittance : |Y | 7.0 S (typ.)  
fs =  
Low leakage current : I  
= 100 μA (max) (V  
= 640 V)  
DSS  
DS  
Enhancement mode  
: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
DS D  
th  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
800  
800  
±30  
8
V
V
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
Drain current  
I
24  
A
DP  
Drain power dissipation (Tc = 25°C)  
P
85  
W
D
AS  
AR  
JEDEC  
JEITA  
―
―
Single pulse avalanche energy  
E
883  
mJ  
(Note 2)  
TOSHIBA  
2-16F1B  
Avalanche current  
I
8
8.5  
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
Weight: 5.8 g (typ.)  
AR  
T
ch  
150  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
1.47  
41.6  
°C / W  
°C / W  
th (ch−c)  
R
th (ch−a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 25.0 mH, I = 8 A, R = 25 Ω  
V
DD  
ch  
AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2009-09-29  
123

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