Datasheet > 2SK2607_09

2SK2607_09

更新时间： 2022-09-18 11:56:20

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器驱动 DC-DC转换器
页数	文件大小	规格书
6页	420K
描述
Chopper Regulator, DC−DC Converter and Moter Drive Applications

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2SK2607_09 数据手册

2SK2607

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2607

Chopper Regulator, DC−DC Converter and Moter Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 1.0 Ω (typ.)

DS (ON)

: |Y | 7.0 S (typ.)

fs =

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 640 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

800

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

1. GATE

DC (Note 1)

Pulse (Note 1)

2. DRAIN (HEAT SINK)

3. SOURCE

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

150

JEDEC

―

778

(Note 2)

JEITA

SC-65

2-16C1B

Avalanche current

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 4.6 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.883

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 17.4 mH, R = 25 Ω, I

= 9 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

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