Datasheet > 2SK2608_09

2SK2608_09

更新时间： 2024-11-15 07:32:23

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	410K
描述
Switching Regulator Applications

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中文翻译

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数据手册

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2SK2608_09 数据手册

2SK2605

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2605

Switching Regulator Applications

Unit: mm

Low drain−source ON resistance

: R

= 1.9 Ω (typ.)

DS (ON)

High forward transfer admittance

: |Y | = 3.8 S (typ.)

Low leakage current

Enhancement mode

: I

= 100 μA (max) (V

= 640 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

800

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20k Ω)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

JEITA

―

370

(Note 2)

SC-67

2-10R1B

Avalanche current

4.5

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.9 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

2.78

62.5

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 27 mH, R = 25 Ω, I = 5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

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与2SK2608_09相关器件

型号	品牌	获取价格	描述	数据表
2SK260H	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 5A I(D) \| TO-3
2SK2610	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2610_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK2610_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2611	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND M
2SK2611(T)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,9A I(D),TO-247VAR
2SK2611_06	TOSHIBA	获取价格	Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2611_10	TOSHIBA	获取价格	DC−DC Converter, Relay Drive and Motor Drive
2SK2611T	TOSHIBA	获取价格	DCâDC Converter, Relay Drive and Motor Driv
2SK2613	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)

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