Datasheet > 2SK2604_06

2SK2604_06

更新时间： 2024-11-15 04:26:27

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	712K
描述
Silicon N Channel MOS Type Switching Regulator Applications

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2SK2604_06 数据手册

2SK2604

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2604

Switching Regulator Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 1.9 Ω (typ.)

DS (ON)

: |Y | = 3.8 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 640 V)

DSS

: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

800

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20k Ω)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

1. GATE

Drain current

2. DRAIN (HEAT SINK)

3. SOURCE

Drain power dissipation (Tc = 25°C)

125

Single pulse avalanche energy

370

JEDEC

JEITA

―

(Note 2)

Avalanche current

12.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-16C1B

150

Weight: 4.6 g (typ.)

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

1.0

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 27 mH, R = 25 Ω, I = 5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-09

12 3 4 5 6

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与2SK2604_06相关器件

型号	品牌	获取价格	描述	数据表
2SK2604_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK2605	TOSHIBA	获取价格	N CHANNEL MOS TYPE HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR APPLICATIONS)
2SK2605_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications
2SK2605_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK2606	TOSHIBA	获取价格	N CHANNEL MOS TYPE (DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
2SK2606_06	TOSHIBA	获取价格	Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2606_09	TOSHIBA	获取价格	DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2607	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2607(F)	TOSHIBA	获取价格	TRANSISTOR 9 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-16C1B, SC-65, 3 PIN, FET G
2SK2607(Q)	TOSHIBA	获取价格	暂无描述

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