Datasheet > 2SK246_07

2SK246_07

更新时间： 2024-01-05 13:27:28

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	427K
描述
Silicon N Channel Junction Type For Constant Current, Impedance

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中文翻译

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数据手册

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2SK246_07 数据手册

2SK246

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK246

For Constant Current, Impedance

Unit: mm

Converter and DC-AC High Input

Impedance Amplifier Circuit Applications

•

High breakdown voltage: V

= −50 V

GDS

High input impedance: I

= −1 nA (max) (V

= −30 V)

GSS

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Gate-drain voltage

Symbol

Rating

Unit

−50

GDS

Gate current

°C

Drain power dissipation

Junction temperature

Storage temperature range

300

125

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

TO-92

SC-43

TOSHIBA

2-5F1C

Weight: 0.21 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate cut-off current

Symbol

Test Condition

Min

Typ.

Max

Unit

= −30 V, V

= 0

⎯

−1.0

GSS

Gate-drain breakdown voltage

= 0, I = −100 μA

−50

⎯

(BR) GDS

DSS

(Note)

Drain current

= 10 V, V

= 0

1.2

⎯

Gate-source cut-off voltage

Forward transfer admittance

Input capacitance

= 10 V, I = 0.1 μA

−0.7

1.5

⎯

−6.0

⎯

GS (OFF)

⎪Y ⎪

= 10 V, V

= 0, f = 1 kHz

= 0, f = 1 MHz

9.0

2.5

⎯

iss

rss

Reverse transfer capacitance

= 10 V, I = 0, f = 1 MHz

⎯

Note: I

classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA

DSS

2007-11-01

12 3 4

中文翻译

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