是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SFM | 包装说明: | MP-45F, ISOLATED TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.37 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 22.5 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 15 A | 最大漏极电流 (ID): | 15 A |
最大漏源导通电阻: | 0.17 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 30 W |
最大脉冲漏极电流 (IDM): | 60 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SK2462-AZ | RENESAS |
完全替代 |
Silicon N Channel MOSFET, MP-45F, /Bag |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2462(0)-AZ | RENESAS |
获取价格 |
2SK2462(0)-AZ | |
2SK2462-AZ | RENESAS |
获取价格 |
Silicon N Channel MOSFET, MP-45F, /Bag | |
2SK2463 | ROHM |
获取价格 |
Small switching (60V, 2A) | |
2SK2463T100 | ROHM |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 60V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK2463T101 | ROHM |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
2SK2464 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications | |
2SK2466 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE(HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER | |
2SK2467 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) | |
2SK2467_06 | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type High-Power Amplifier Application | |
2SK2467Y | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 9A I(D) | TO-247VAR |