是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.81 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 2 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 子类别: | FET General Purpose Power |
表面贴装: | YES |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2463T100 | ROHM |
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Power Field-Effect Transistor, 2A I(D), 60V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK2463T101 | ROHM |
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Power Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
2SK2464 | SANYO |
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Ultrahigh-Speed Switching Applications | |
2SK2466 | TOSHIBA |
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N CHANNEL MOS TYPE(HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER | |
2SK2467 | TOSHIBA |
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N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) | |
2SK2467_06 | TOSHIBA |
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Silicon N Channel MOS Type High-Power Amplifier Application | |
2SK2467Y | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 9A I(D) | TO-247VAR | |
2SK2467-Y | TOSHIBA |
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N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) | |
2SK2469-01MR | FUJI |
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N-channel MOS-FET | |
2SK246BL | TOSHIBA |
获取价格 |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IM |