2SK2461-AZ

更新时间： 2024-02-01 19:59:46

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中文翻译

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2SK2461-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2461

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

PACKAGE DIMENSIONS

The 2SK2461 is N-Channel MOS Field Effect Transistor de-

signed for high speed switching applications.

(in millimeters)

10.0 0.ꢀ

4.5 0.2

ꢀ.2 0.2

FEATURES

2.7 0.2

• Low On-Resistance

R^DS(on)1= 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A)

R^DS(on)2= 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A)

• Low Ciss

Ciss = 1400 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

VDSS

100

±20

±80

VGSS

0.7 0.1

2.54

1.ꢀ 0.2

2.5 0.1

1.5 0.2

2.54

0.65 0.1

ID(DC)

ID(pulse)

Drain Current (pulse)*

1. Gate

2. Drain

ꢀ. Source

Total Power Dissipation (T^c= 25 ˚C) PT1

Total Power Dissipation (TA = 25 ˚C) PT2

˚C

2.0

Channel Temperature

Tch

T^stg

IAS

150

2 ꢀ

Storage Temperature

–55 to +150 ˚C

Single Avalanche Current**

Single Avalanche Energy**

MP-45F (ISOLATED TO-220)

EAS

PW ≤ 10 µs, Duty Cycle ≤ 1 %

Drain

** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

Body

Diode

Gate

Gate Protection

Diode

Source

Document No. TC-2529

(O. D. No. TC-8078)

Date Published April 1995

Printed in Japan

1995

12 3 4 5 6 7 8

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2SK2462(0)-AZ	RENESAS	获取价格	2SK2462(0)-AZ
2SK2462-AZ	RENESAS	获取价格	Silicon N Channel MOSFET, MP-45F, /Bag
2SK2463	ROHM	获取价格	Small switching (60V, 2A)
2SK2463T100	ROHM	获取价格	Power Field-Effect Transistor, 2A I(D), 60V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal
2SK2463T101	ROHM	获取价格	Power Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Se
2SK2464	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SK2466	TOSHIBA	获取价格	N CHANNEL MOS TYPE(HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2467	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)