生命周期: | Obsolete | 零件包装代码: | TO-220ML |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | ISOLATED |
配置: | SINGLE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 6 A | 最大漏极电流 (ID): | 6 A |
最大漏源导通电阻: | 0.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 25 W |
最大功率耗散 (Abs): | 25 W | 最大脉冲漏极电流 (IDM): | 24 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2109 | NEC |
获取价格 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | |
2SK2109 | KEXIN |
获取价格 |
MOS Field Effect Transistor | |
2SK2109 | TYSEMI |
获取价格 |
Low on-resistance RDS(on)=1.0 MAX High switching speed | |
2SK2109-AZ | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
2SK210BL | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 12MA I(DSS) | SC-59 | |
2SK210-BL | TOSHIBA |
获取价格 |
FM Tuner Applications VHF Band Amplifier Applications | |
2SK210-BLTE85L | TOSHIBA |
获取价格 |
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236, FET RF Small Signal | |
2SK210-BLTE85R | TOSHIBA |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236, FET RF Small Signal | |
2SK210GR | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SC-59 | |
2SK210-GR | TOSHIBA |
获取价格 |
FM Tuner Applications VHF Band Amplifier Applications |