Datasheet > 2SK184_07

2SK184_07

更新时间： 2024-01-06 11:24:26

品牌	Logo	应用领域
东芝 - TOSHIBA		音频放大器
页数	文件大小	规格书
4页	580K
描述
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK184_07 数据手册

2SK184

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK184

Low Noise Audio Amplifier Applications

Unit: mm

•

High |Y |: |Y | = 15 mS (typ.) (V

= 10 V, V

= 0)

High breakdown voltage: V

= −50 V

GDS

Low noise: NF = 1.0dB (typ.)

= 10 V, I = 0.5 mA, f = 1 kHz, R = 1 kΩ)

•

High input impedance: I

Small package

= −1 nA (max) (V

= −30 V)

GSS

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Gate-drain voltage

Symbol

Rating

Unit

−50

GDS

Gate current

°C

Drain power dissipation

Junction temperature

Storage temperature range

200

125

stg

−55~125

°C

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-4E1C

Weight: 0.13 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate cut-off current

Symbol

Test Condition

Min

Typ.

Max

Unit

= −30 V, V

= 0

⎯

−1.0

GSS

Gate-drain breakdown voltage

= 0, I = −100 μA

−50

⎯

(BR) GDS

DSS

(Note)

Drain current

= 10 V, V

= 0

1.2

⎯

14.0

Gate-source cut-off voltage

Forward transfer admittance

Input capacitance

= 10 V, I = 0.1 μA

−0.2

4.0

⎯

−1.5

⎯

GS (OFF)

⎪Y ⎪

= 10 V, V

= 0, f = 1 kHz

= 0, f = 1 MHz

⎯

iss

rss

Reverse transfer capacitance

= 10 V, I = 0, f = 1 MHz

⎯

= 10 V, R = 1 kΩ, I = 0.5 mA,

NF (1)

NF (2)

⎯

f = 10 Hz

Noise figure

= 10 V, R = 1 kΩ, I = 0.5 mA,

f = 1 kHz

Note: I

classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14.0 mA

DSS

2007-11-01

12 3 4

中文翻译

下载PDF

与2SK184_07相关器件

型号	品牌	获取价格	描述	数据表
2SK1840	SANYO	获取价格	Analog Switch Applications
2SK1841	SANYO	获取价格	Very High-Speed Switching, Analog Switch Applications
2SK1841-AC	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
2SK1841AD	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
2SK1841-AP	ONSEMI	获取价格	100mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK1842	PANASONIC	获取价格	Silicon N-Channel Junction FET
2SK1842Q	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction
2SK1842R	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction
2SK1842S	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction
2SK1842TMG	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction

与2SK184_07相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

4
PMOS管背靠背连接：串联还是并联？
2024-06-28

4
高压电解电容的分类与选型策略
2024-06-28

5
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

11

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK184_07

2SK184_07 数据手册

与2SK184_07相关器件

与2SK184_07相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK184_07

2SK184_07 数据手册

与2SK184_07相关器件

与2SK184_07相关文章

您还可以找

您在本页遇到什么问题？