生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.84 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 0.25 A |
最大漏源导通电阻: | 3.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1849(MJ)TB | ONSEMI |
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Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Met | |
2SK184BL | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SPAK | |
2SK184-BL | TOSHIBA |
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TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Sig | |
2SK184GR | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 2.6MA I(DSS) | SPAK | |
2SK184-GR | TOSHIBA |
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Low Noise Audio Amplifier Applications | |
2SK184-GRTPE4 | TOSHIBA |
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type | |
2SK184Y | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | SPAK | |
2SK184-Y | TOSHIBA |
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TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Sig | |
2SK1850 | NEC |
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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK1850-AZ | RENESAS |
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10A, 60V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET |