2SK184-GR

更新时间： 2024-02-11 05:27:58

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体音频放大器小信号场效应晶体管
页数	文件大小	规格书
4页	320K
描述
Low Noise Audio Amplifier Applications

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中文翻译

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技术参数
数据手册

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2SK184-GR 技术参数

生命周期：	Transferred	包装说明：	2-4E1C, 3 PIN
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.31	其他特性：	LOW NOISE
配置：	SINGLE	FET 技术：	JUNCTION
JESD-30 代码：	R-PSIP-T3	元件数量：	1
端子数量：	3	工作模式：	DEPLETION MODE
最高工作温度：	125 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

2SK184-GR 数据手册

2SK184

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK184

Low Noise Audio Amplifier Applications

Unit: mm

•

High |Y |: |Y | = 15 mS (typ.) (V

= 10 V, V

= 0)

High breakdown voltage: V

= −50 V

GDS

Low noise: NF = 1.0dB (typ.)

= 10 V, I = 0.5 mA, f = 1 kHz, R = 1 kΩ)

•

High input impedance: I

Small package

= −1 nA (max) (V

= −30 V)

GSS

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Gate-drain voltage

Symbol

Rating

Unit

−50

GDS

Gate current

°C

Drain power dissipation

Junction temperature

Storage temperature range

200

125

stg

−55~125

°C

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-4E1C

Weight: 0.13 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate cut-off current

Symbol

Test Condition

Min

Typ.

Max

Unit

= −30 V, V

= 0

⎯

−1.0

GSS

Gate-drain breakdown voltage

= 0, I = −100 μA

−50

⎯

(BR) GDS

DSS

(Note)

Drain current

= 10 V, V

= 0

1.2

⎯

14.0

Gate-source cut-off voltage

Forward transfer admittance

Input capacitance

= 10 V, I = 0.1 μA

−0.2

4.0

⎯

−1.5

⎯

GS (OFF)

⎪Y ⎪

= 10 V, V

= 0, f = 1 kHz

= 0, f = 1 MHz

⎯

iss

rss

Reverse transfer capacitance

= 10 V, I = 0, f = 1 MHz

⎯

= 10 V, R = 1 kΩ, I = 0.5 mA,

NF (1)

NF (2)

⎯

f = 10 Hz

Noise figure

= 10 V, R = 1 kΩ, I = 0.5 mA,

f = 1 kHz

Note: I

classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14.0 mA

DSS

2007-11-01

12 3 4

中文翻译

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与2SK184-GR相关器件

型号	品牌	获取价格	描述	数据表
2SK184-GRTPE4	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK184Y	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 1.2MA I(DSS) \| SPAK
2SK184-Y	TOSHIBA	获取价格	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Sig
2SK1850	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK1850-AZ	RENESAS	获取价格	10A, 60V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1851	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK1852	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK1852-AZ	NEC	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
2SK1853	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK1853	RENESAS	获取价格	15A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET

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