生命周期: | Obsolete | 零件包装代码: | TO-220IS |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.83 | 外壳连接: | ISOLATED |
配置: | SINGLE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 25 A | 最大漏源导通电阻: | 0.06 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 40 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1347 | TOSHIBA |
获取价格 |
TRANSISTOR 20 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purp | |
2SK1348 | TOSHIBA |
获取价格 |
TRANSISTOR 20 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220IS, TO-220IS, 3 PIN, | |
2SK1349 | TOSHIBA |
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TRANSISTOR 25 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK135 | HITACHI |
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LOW FREQUENCY POWER AMPLIFIER | |
2SK1350 | TOSHIBA |
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TRANSISTOR 15 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK1351 | TOSHIBA |
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TRANSISTOR 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK1352 | TOSHIBA |
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TRANSISTOR 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK1356 | TOSHIBA |
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TRANSISTOR 3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220IS, TO-220IS, 3 PIN, F | |
2SK1357 | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK1358 | TOSHIBA |
获取价格 |
FET, Silicon N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive |