Datasheet > 2SK1365_06

2SK1365_06

更新时间： 2024-11-28 04:26:23

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
6页	766K
描述
Silicon N Channel MOS Type Switching Power Supply Applications

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2SK1365_06 数据手册

2SK1365

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII^.5)

2SK1365

Switching Power Supply Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 1.5 Ω (typ.)

DS (ON)

: |Y | = 4.0 S (typ.)

z Low leakage current : I

= 300 μA (max) (V

= 800 V)

DSS

z Enhancement mode : V = 1.5~3.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

1000

±20

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

JEDEC

JEITA

―

Drain current

Drain power dissipation (Tc = 25°C)

Channel temperature

°C

stg

TOSHIBA

2-16F1B

150

Weight: 5.8 g (typ.)

Storage temperature range

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

1.39

41.6

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-09

12 3 4 5 6

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