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2SK1374H PDF预览

2SK1374H

更新时间: 2024-11-28 13:02:23
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 37K
描述
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

2SK1374H 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.83
配置:SINGLE最小漏源击穿电压:50 V
最大漏极电流 (ID):0.1 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK1374H 数据手册

 浏览型号2SK1374H的Datasheet PDF文件第2页 
Silicon MOS FETs (Small Signal)  
2SK1374  
Silicon N-Channel MOS FET  
For switching  
unit: mm  
2.1±0.1  
Features  
0.425  
1.25±0.1  
0.425  
High-speed switching  
Wide frequency band  
1
Incorporating a built-in gate protection-diode  
Allowing 2.5V drive  
3
2
Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Drain to Source voltage  
Gate to Source voltage  
Drain current  
Symbol  
VDS  
VGSO  
ID  
Ratings  
Unit  
V
50  
10  
V
0.2±0.1  
50  
mA  
mA  
mW  
°C  
Max drain current  
IDP  
100  
1: Gate  
2: Source  
3: Drain  
EIAJ: SC-70  
S-Mini Type Package (3-pin)  
Allowable power dissipation  
Channel temperature  
Storage temperature  
PD  
150  
Tch  
150  
Marking Symbol: 4V  
Tstg  
55 to +150  
°C  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
IDSS  
Conditions  
min  
typ  
max  
Unit  
µA  
µA  
V
Drain to Source cut-off current  
Gate to Source leakage current  
VDS = 20V, VGS = 0  
1
1
IGSS  
VGS = 10V, VDS = 0  
ID = 10µA, VGS = 0  
ID = 100µA, VDS = 5V  
Drain to Source breakdown voltage VDSS  
50  
100  
0.8  
27  
Gate threshold voltage  
Vth  
0.5  
1.1  
50  
V
1
*
Drain to Source ON-resistance  
Forward transfer admittance  
RDS(on)  
| Yfs |  
I
D = 10mA, VGS = 2.5V  
ID = 10mA, VDS = 5V, f = 1kHz  
VDS = 5V, VGS = 0, f = 1MHz  
20  
39  
mS  
pF  
pF  
pF  
µs  
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
Reverse transfer capacitance (Common Source) Crss  
4.5  
4.1  
1.2  
0.2  
0.2  
2
*
Turn-on time  
Turn-off time  
ton  
VDD = 5V, VGS = 0 to 2.5V, RL = 470  
VDD = 5V, VGS = 2.5 to 0V, RL = 470Ω  
2
*
toff  
µs  
1 Pulse measurement  
*
2 ton, toff measurement circuit  
*
Vout  
470  
90%  
10%  
Vin  
Vout  
VGS = 2.5V  
VDD = 5V  
10%  
90%  
50Ω  
ton  
toff  
1

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