Datasheet > 2SK1374G0L

2SK1374G0L

更新时间： 2024-11-28 12:52:23

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	287K
描述
Silicon N-channel MOSFET

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数据手册

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2SK1374G0L 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Silicon MOSFETs (Small Signal)

2SK1374G

Silicon N-channel MOSFET

For switching circuits

■ Features

■ Package

•

• High-speed switching

Code

•

Wide frequency band

Incorporating a built-in gate protection-diode

Allowing 2.5 V drive

SMini3-F2

Marking Symbol: 4V

Pin Name

1: Gate

•

2: Source

3: Drain

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Drain-source voltage

Symbol

V_DS

V_GSO

I_D

Rating

Unit

Gate-source voltage (Drain open)

Drain current

°C

Peak drain current

I_DP

100

Power dissipation

P_D

150

Channel temperature

Storage temperature

T_ch

150

T_stg

−55 to +150

°C

■ Electrical Characteristics T_a= 25°C

Parameter

Drain-source surrender voltage

Drain-source cutoff current

Gate-source cutoff current

Gate threshold voltage

Symbol

V_DSS

I_DSS

Conditions

Min

Typ

Max

Unit

I_D= 10 µA, V_GS= 0

V_DS= 20 V, V_GS= 0

V_GS= 10 V, V_DS= 0

I_D= 100 µA, V_DS= 5 V

100

1.0

1.1

µA

I_GSS

V_th

0.5

0.8

Forward transfer admittance

Drain-source ON resistance

Y_fs

I_D= 10 mA, V_DS= 5 V, f = 1 kHz

Ω

R_DS(on)I_D= 10 mA, V_GS= 2.5 V

C_iss

C_oss

C_rss

V_DS= 5 V, V_GS= 0, f = 1 MHz

4.5

Short-circuit forward transfer capacitance

(Common source)

4.1

1.2

Short-circuit output capacitance

(Common source)

Reverse transfer capacitance

(Common source)

1, 2

Turn-on time ^*

t_on

V_DD= 5 V, R_L= 470 Ω, V_GS= 0 V to 2.5 V

V_DD= 5 V, R_L= 470 Ω, V_GS= 2.5 V to 0 V

0.2

µs

1, 2

Turn-off time ^*

t_off

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

V_OUT

470 Ω

2: t_on, t_offtest circuit

90%

10%

V_IN

V_OUT

V_GS= 2.5 V

10%

100 µF

V_DD= 5 V

90%

50 Ω

t_on

t_off

Publication date:June 2007

SJF00063AED

12 3 4

中文翻译

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