生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.74 | 其他特性: | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 8 A |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.22 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 20 W | 最大脉冲漏极电流 (IDM): | 32 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SK1083MR | ETC | LOGIC LEVEL MOSFET |
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2SK1083-MR | FUJI | N-channel MOS-FET |
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2SK1084 | FUJI | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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2SK1085 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB |
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2SK1085-M | FUJI | N-channel MOS-FET |
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2SK1085MR | FUJI | Power Field-Effect Transistor, 3A I(D), 150V, 1.17ohm, 1-Element, N-Channel, Silicon, Meta |
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