2SK1088-M

更新时间： 2024-11-25 22:06:51

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
2页	185K
描述
N-channel MOS-FET

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中文翻译

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数据手册

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2SK1088-M 数据手册

N-channel MOS-FET

2SK1088-M

F-III Series

150V 0,3W

35W

> Features

> Outline Drawing

- High Current

- Low On-Resistance

- No Secondary Breakdown

- Low Driving Power

- High Forward Transconductance

> Applications

- Motor Control

- General Purpose Power Amplifier

- DC-DC converters

> Maximum Ratings and Characteristics

> Equivalent Circuit

- Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item

Symbol

Rating

150

Unit

Drain-Source-Voltage

Continous Drain Current

Pulsed Drain Current

D(puls)

Continous Reverse Drain Current

Gate-Source-Voltage

±20

Max. Power Dissipation

Operating and Storage Temperature Range

°C

150

-55 ~ +150

stg

Electrical Characteristics (T_C=25°C), unless otherwise specified

Item

Symbol

Test conditions

Min.

150

1,0

Typ.

1,5

Max.

Unit

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

I_D=1mA

V_DS=150V

V_GS=0V

V_GS=±20V

I_D=4,5A

V_GS=0V

(BR)DSS

V_DS=V_GS

T_ch=25°C

T_ch=125°C

V_DS=0V

2,5

500

1,0

GS(th)

0,2

µA

DSS

Gate Source Leakage Current

100

0,40

0,30

GSS

Drain Source On-State Resistance

V_GS=4V

0,26

0,20

DS(on)

V_GS=10V

V_DS=25V

Forward Transconductance

Input Capacitance

V_DS=25V

900

150

1200

230

iss

Output Capacitance

V_GS=0V

f=1MHz

V_CC=30V

I_D=9A

oss

Reverse Transfer Capacitance

Turn-On-Time t_on(t_on=t_d(on)+t_r)

rss

d(on)

Turn-Off-Time t_off(t_on=t_d(off)+t_f)

V_GS=10V

R_GS=25W

150

230

d(off)

Diode Forward On-Voltage

Reverse Recovery Time

I_F=2xI_DRV_GS=0V T_ch=25°C

I_F=I_DRV_GS=0V

1,1

100

1,5

-dI_F/dt=100A/µs T_ch=25°C

Thermal Characteristics

Item

Symbol

Test conditions

channel to air

Min.

Typ.

Max.

62,5

Unit

Thermal Resistance

°C/W

th(ch-a)

channel to case

3,57 °C/W

th(ch-c)

FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56

中文翻译

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