Datasheet > 2SK1094

2SK1094

更新时间： 2024-11-25 21:55:35

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
3页	22K
描述
Silicon N-Channel MOS FET

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2SK1094 数据手册

2SK1094

Silicon N-Channel MOS FET

Application

TO–220FM

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device

– Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter,

power switch and solenoid drive

1. Gate

2. Drain

3. Source

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

DSS

———————————————————————————————————————————

Gate to source voltage

±20

GSS

———————————————————————————————————————————

Drain current

———————————————————————————————————————————

Drain peak current

D(pulse)

———————————————————————————————————————————

Body to drain diode reverse drain current

———————————————————————————————————————————

Channel dissipation

Pch**

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

PW ≤ 10 µs, duty cycle ≤ 1 %

** Value at T = 25 °C

12 3

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